Advancedsemiconductor.com/1N5152
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Terminal Form":"NO LEAD","Package Style":"MICROWAVE","Diode Element Material":"SILICON","Power Dissipation Limit-Max":"5.5 W","Terminal Position":"END","Diode Type":"VOLTAGE MULTIPLIER DIODE","Package Shape":"ROUND","Number of Terminals":"2","Surface Mount":"Yes"}...
1021 Bytes - 08:20:15, 03 July 2024
Advancedsemiconductor.com/1N5152A
{"Status":"ACTIVE","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Terminal Form":"NO LEAD","Package Style":"MICROWAVE","Diode Element Material":"SILICON","Power Dissipation Limit-Max":"8.4 W","Terminal Position":"END","Diode Type":"VOLTAGE MULTIPLIER DIODE","Package Shape":"ROUND","Number of Terminals":"2","Surface Mount":"Yes"}...
1020 Bytes - 08:20:15, 03 July 2024
Various/1N5152
{"Semiconductor Material":"Silicon","f(co) Min. (Hz) Cut-off freq.":"1.0M","Package":"Pill-C","P(D) Max.(W) Power Dissipation":"7.5","V(RRM)(V) Rep.Pk.Rev. Voltage":"75","Ct{Cj} Nom. (F) Junction Cap.":"6.2p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"6.0"}...
702 Bytes - 08:20:15, 03 July 2024
Various/1N5152A
{"Semiconductor Material":"Silicon","Package":"Pill-C","P(D) Max.(W) Power Dissipation":"8.4","V(RRM)(V) Rep.Pk.Rev. Voltage":"75","Ct{Cj} Nom. (F) Junction Cap.":"6.0p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"6.0"}...
668 Bytes - 08:20:15, 03 July 2024