{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Mfr Package Description":"GLASS PACKAGE-2","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.9","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"10 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"68 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"250","Terminal Position"...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Number of Elements":"1","Mfr Package Description":"DIE-1","Breakdown Voltage-Min":"30 V","Terminal Form":"NO LEAD","Diode Capacitance Ratio-Min":"2.9","Package Style":"UNCASED CHIP","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"68 pF","Diode Cap Tolerance":"10 %","Quality Factor-Min":"250","Terminal Position":"UPPER","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"UNSPECIFIED","Configuration":"SINGLE","Package Body Material":"UNS...

{"C1\/C2 Min. Capacitance Ratio":"2.9","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"250","P(D) Max.(W) Power Dissipation":"250m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"68p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...

{"C1\/C2 Min. Capacitance Ratio":"2.9","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"250","P(D) Max.(W) Power Dissipation":"250m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"68p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...

{"C1\/C2 Min. Capacitance Ratio":"2.9","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"250","P(D) Max.(W) Power Dissipation":"250m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"68p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.9","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"10 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"68 pF","Power Dissipation Limit-Max":"0.4000 W","Case Connection":"ISOLATED","Quality Factor-Min":"...

{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Breakdown Voltage-Min":"30 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.9","Package Style":"LONG FORM","Variable Capacitance Diode Classification":"ABRUPT","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"68 pF","Power Dissipation Limit-Max":"0.4000 W","Diode Cap Tolerance":"10 %","Quality Factor-Min":"250","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Shape":"ROUND...

{"C1\/C2 Min. Capacitance Ratio":"2.9","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"250","P(D) Max.(W) Power Dissipation":"400m","Package":"DO-7","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"68p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...

{"C1\/C2 Min. Capacitance Ratio":"2.9","V(RRM)(V) Rep.Pk.Rev. Voltage":"30","Semiconductor Material":"Silicon","Q Factor Min.":"250","Package":"Chip","@Freq. (Hz) (Test Condition)":"50M","Ct{Cj} Nom. (F) Junction Cap.":"68p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0"}...