AP0504GMT-HF
23.6 A, 40 V, 0.0055 ohm, N-CHANNEL, Si, POWER, MOSFET

From Advanced Power Electronics Corp. USA

StatusACTIVE
Avalanche Energy Rating (Eas)28.8 mJ
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min40 V
Drain Current-Max (ID)23.6 A
Drain-source On Resistance-Max0.0055 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package Description6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PMPAK-8
Number of Elements1
Number of Terminals8
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Power Dissipation Ambient-Max5 W
Pulsed Drain Current-Max (IDM)300 A
Surface MountYes
Terminal FormFLAT
Terminal PositionDUAL
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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