{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b116(V)","Channel Mode":"Enhancement","Power Dissipation":"2.5(W)","Continuous Drain Current":"22(A)","Mounting":"Surface Mount","Operating Temp Range":"-55C to 175C","Drain-Source On-Volt":"40(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Rad Hardened":"No","Package Type":"DIRECT-FET M4","Type":"Power MOSFET","Pin Count":"9","Number of Elements":"1"}...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2.5V @ 150\u00b5A","Series":"HEXFET\u00ae","PCN Packaging":"Package Drawing Update 19\/Aug\/2015","Supplier Device Package":"DIRECTFET\u2122 M4","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Datasheets":"AUIRL7736M2TR(1)","Rds On (Max) @ Id, Vgs":"3 mOhm @ 67A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packag...

{"Terminal Finish":"MATTE TIN","Terminal Form":"NO LEAD","Avalanche Energy Rating (Eas)":"119 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"UNSPECIFIED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"22 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0030 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"450 A","Channel Type":"N-CHANNEL","FET Techno...