APT5570AN N-Channel Enhancement MOSFET - RthJC 0.63 C/W(max),RthJA 30 C/W(max)
From Advanced Power Technology
| @(VDS) (V) (Test Condition) | 30 |
| Absolute Max. Power Diss. (W) | 198 |
| C(iss) Max. (F) | 1.8n |
| I(D) Abs. Drain Current (A) | 10.5 |
| I(DSS) Min. (A) | 250u |
| I(GSS) Max. (A) | 100n |
| Military | N |
| Package | TO-3 |
| V(BR)DSS (V) | 550 |
| V(BR)GSS (V) | 30 |
| r(DS)on Max. (Ohms) | 700m |
| t(f) Max. (s) Fall time. | 41n |
| t(r) Max. (s) Rise time | 35n |
