ASTD4050-860 18 GHz, SILICON, TUNNEL DIODE
From Advanced Semiconductor, Inc.
| Status | ACTIVE |
| Configuration | SINGLE |
| Diode Element Material | SILICON |
| Diode Type | TUNNEL DIODE |
| Mfr Package Description | 860, 2 PIN |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Output Frequency-Max | 18 GHz |
| Package Body Material | UNSPECIFIED |
| Package Shape | SQUARE |
| Package Style | MICROWAVE |
| Power Dissipation Limit-Max | 0.0500 W |
| Surface Mount | Yes |
| Technology | TUNNEL |
| Terminal Form | FLAT |
| Terminal Position | DUAL |
