MRF175GU
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET

From Advanced Semiconductor, Inc.

StatusACTIVE
Case ConnectionSOURCE
Channel TypeN-CHANNEL
ConfigurationCOMMON SOURCE, 2 ELEMENTS
DS Breakdown Voltage-Min65 V
Drain Current-Max (ID)26 A
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Highest Frequency BandULTRA HIGH FREQUENCY BAND
Number of Elements2
Number of Terminals5
Operating ModeENHANCEMENT
Package Body MaterialCERAMIC, METAL-SEALED COFIRED
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Surface MountYes
Terminal FinishNOT SPECIFIED
Terminal FormFLAT
Terminal PositionDUAL
Transistor Element MaterialSILICON
Transistor TypeRF POWER

External links