CL150
Si NPN Lo-Pwr BJT

From Continental Device India Limited

StatusDiscontinued
@I(C) (A) (Test Condition)150m
@I(F) (A) (Test Condition)50m
@V(CE) (V) (Test Condition)1.0
Absolute Max. Power Diss. (W)800m
Half-Intensity Beam Angle(Deg)25
I(C) Abs.(A) Collector Current1.0
I(CBO) Max. (A)50n
I(F) Max. (A) Forward Current120m
MilitaryN
P(D) Max.(W) Power Dissipation150m
P(O)rad Min.(W)Rad. Out. Power270u
PackageTO-39
Peak Wavelength (m)930n
Semiconductor MaterialGaAs
Spectral Bandwidth (m)36n
V(BR)CBO (V)35
V(BR)CEO (V)30
V(F) Max.(V) Forward Voltage1.5
V(R) Max.(V) Reverse Voltage6.0
f(T) Min. (Hz) Transition Freq80M
h(FE) Min. Static Current Gain50
t(resp) Max.(s) Response Time700n

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