CL150 Si NPN Lo-Pwr BJT
From Continental Device India Limited
Status | Discontinued |
@I(C) (A) (Test Condition) | 150m |
@I(F) (A) (Test Condition) | 50m |
@V(CE) (V) (Test Condition) | 1.0 |
Absolute Max. Power Diss. (W) | 800m |
Half-Intensity Beam Angle(Deg) | 25 |
I(C) Abs.(A) Collector Current | 1.0 |
I(CBO) Max. (A) | 50n |
I(F) Max. (A) Forward Current | 120m |
Military | N |
P(D) Max.(W) Power Dissipation | 150m |
P(O)rad Min.(W)Rad. Out. Power | 270u |
Package | TO-39 |
Peak Wavelength (m) | 930n |
Semiconductor Material | GaAs |
Spectral Bandwidth (m) | 36n |
V(BR)CBO (V) | 35 |
V(BR)CEO (V) | 30 |
V(F) Max.(V) Forward Voltage | 1.5 |
V(R) Max.(V) Reverse Voltage | 6.0 |
f(T) Min. (Hz) Transition Freq | 80M |
h(FE) Min. Static Current Gain | 50 |
t(resp) Max.(s) Response Time | 700n |