2N7002T7-7
115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

From DIODES Incorporated

StatusACTIVE-UNCONFIRMED
Channel TypeN-CHANNEL
ConfigurationSINGLE
DS Breakdown Voltage-Min60 V
Drain Current-Max (ID)0.1150 A
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Surface MountYes
Terminal FormGULL WING
Terminal PositionDUAL
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE SMALL SIGNAL

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