2N7002T7-7 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
From DIODES Incorporated
Status | ACTIVE-UNCONFIRMED |
Channel Type | N-CHANNEL |
Configuration | SINGLE |
DS Breakdown Voltage-Min | 60 V |
Drain Current-Max (ID) | 0.1150 A |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Number of Elements | 1 |
Number of Terminals | 3 |
Operating Mode | ENHANCEMENT |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE |
Surface Mount | Yes |
Terminal Form | GULL WING |
Terminal Position | DUAL |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE SMALL SIGNAL |