APT13005DT-G1 Bipolar Transistors - BJT 450V NPN High Volt PWR Trans 450BVceo
From Diodes Incorporated
Brand | Diodes Incorporated |
Collector- Emitter Voltage VCEO Max | 450 V |
Collector-Emitter Saturation Voltage | 900 mV |
Configuration | Single |
DC Collector/Base Gain hfe Min | 8 at 2 A, 5 V |
DC Current Gain hFE Max | 35 at 2 A at 5 V |
Emitter- Base Voltage VEBO | 9 V |
Gain Bandwidth Product fT | 4 MHz |
Manufacturer | Diodes Incorporated |
Maximum DC Collector Current | 8 A |
Maximum Operating Temperature | + 150 C |
Minimum Operating Temperature | - 65 C |
Mounting Style | Through Hole |
Package / Case | TO-220AB-3 |
Packaging | Reel |
Pd - Power Dissipation | 75 W |
Product Category | Bipolar Transistors - BJT |
RoHS | Details |
Series | APT13005 |
Transistor Polarity | NPN |