APT13005DTF-G1
Bipolar Transistors - BJT 450V NPN High Volt PWR Trans 450BVceo

From Diodes Incorporated

BrandDiodes Incorporated
Collector- Emitter Voltage VCEO Max450 V
Collector-Emitter Saturation Voltage900 mV
ConfigurationSingle
DC Collector/Base Gain hfe Min8 at 2 A, 5 V
DC Current Gain hFE Max35 at 2 A at 5 V
Emitter- Base Voltage VEBO9 V
Gain Bandwidth Product fT4 MHz
ManufacturerDiodes Incorporated
Maximum DC Collector Current8 A
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
Mounting StyleThrough Hole
Package / CaseTO-220F-3
PackagingReel
Pd - Power Dissipation28 W
Product CategoryBipolar Transistors - BJT
RoHSDetails
SeriesAPT13005
Transistor PolarityNPN

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