ZXMN7A11GTC
3.8 A, 70 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261AA

From DIODES Incorporated

StatusACTIVE
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min70 V
Drain Current-Max (ID)3.8 A
Drain-source On Resistance-Max0.1300 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionSOT-223, 4-PIN
Number of Elements1
Number of Terminals4
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Pulsed Drain Current-Max (IDM)10 A
Surface MountYes
Terminal FinishMATTE TIN
Terminal FormGULL WING
Terminal PositionDUAL
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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