ZXMP6A17DN8TC 2.3 A, 60 V, 0.125 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
From DIODES Incorporated
Status | ACTIVE |
Case Connection | DRAIN |
Channel Type | P-CHANNEL |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 60 V |
Drain Current-Max (ID) | 2.3 A |
Drain-source On Resistance-Max | 0.1250 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Mfr Package Description | SO-8 |
Number of Elements | 2 |
Number of Terminals | 8 |
Operating Mode | ENHANCEMENT |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE |
Pulsed Drain Current-Max (IDM) | 11.1 A |
Surface Mount | Yes |
Terminal Finish | MATTE TIN |
Terminal Form | GULL WING |
Terminal Position | DUAL |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE POWER |