Did you mean: BUK9832-55A
Product Datasheet Search Results:
13 Pages, 932 KB, Original- BUK9832-55A/CUX
- Nexperia
- Trans MOSFET N-CH 55V 12A Automotive 4-Pin(3+Tab) SC-73 T/R
10 Pages, 423 KB, Original- BUK9832-55A
- Nxp Semiconductors
- MOSFET N-CH 55V 12A SOT223 - BUK9832-55A,115
10 Pages, 423 KB, Original- BUK9832-55A,115
- Nxp Semiconductors
- MOSFET N-CH 55V 12A SOT223 - BUK9832-55A,115
14 Pages, 185 KB, Original- BUK9832-55A/CUX
- Nxp Semiconductors
- MOSFET N-channel TrenchMOS logic level FET
13 Pages, 310 KB, Original- BUK9832-55AT/R
- Nxp Semiconductors / Philips Semiconductors
- TrenchMOS logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 12 A; Q<sub>gd</sub> (typ): 11 nC; R<sub>DS(on)</sub>: 29@10V32@5V36@4.5V mOhm; Thermal Resistance: 15 K/W; V<sub>DS</sub>max: 55 V
13 Pages, 310 KB, Original- BUK9832-55ATRL
- Nxp
- 12 A, 55 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET
13 Pages, 310 KB, Original- BUK9832-55ATRL13
- Nxp
- 12 A, 55 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET
13 Pages, 310 KB, Original- BUK9832-55A
- Philips Semiconductors / Nxp Semiconductors
- TrenchMOS logic level FET
Product Details Search Results:
Nexperia/BUK9832-55A/CUX
{"Polarity":"N","Gate-Source Voltage (Max)":"10(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"12(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"55(V)","Packaging":"Tape and Reel","Power Dissipation":"8(W)","Operating Temp Range":"-55C to 150C","Package Type":"SC-73","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
1420 Bytes - 14:49:32, 14 November 2024
Nxp.com/BUK9832-55A
{"Terminal Finish":"TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"100 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"12 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0360 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"47 A","Channel Type":"N-CHANNEL","China RoHS Co...
1554 Bytes - 14:49:32, 14 November 2024
Nxp.com/BUK9832-55A,115
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Vgs(th) (Max) @ Id":"2V @ 1mA","Package / Case":"TO-261-4, TO-261AA","Current - Continuous Drain (Id) @ 25\u00b0C":"12A (Tc)","Gate Charge (Qg) @ Vgs":"-","Product Photos":"SC-73","PCN Design/Specification":"Resin Hardener 02/Jul/2013 SOT223 Copper Wire 23/Dec/2013 Copper Wire Revision 17/Mar/2014 Copper Wire Revision 24/May/2014","Rds On (Max) @ Id, Vgs":"29 mOhm @ 8A, 10V","Datasheets":"BUK9832-55A","FET Type":"MOSFET N-Channe...
2101 Bytes - 14:49:32, 14 November 2024
Nxp.com/BUK9832-55A/CUX
{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate","Online Catalog":"N-Channel Logic Level Gate FETs","Product Photos":"SC-73","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2V @ 1mA","Input Capacitance (Ciss) @ Vds":"1594pF @ 25V","Series":"TrenchMOS\u2122","Standard Package":"1","Supplier Device Package":"SC-73","Datasheets":"BUK9832-55A","Rds On (Max) @ Id, Vgs":"29 mOhm @ 8A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Digi-Reel\u00ae","Power - Max":"8W","Pac...
1718 Bytes - 14:49:32, 14 November 2024
Nxp.com/BUK9832-55ATRL
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"100 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"12 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0360 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"47 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"55 V","Tr...
1475 Bytes - 14:49:32, 14 November 2024
Nxp.com/BUK9832-55ATRL13
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"100 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"12 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0360 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"47 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"55 V","Tr...
1487 Bytes - 14:49:32, 14 November 2024
