EP2015L
Independent Transistor Array - hFE Matching 10%

From Elantec Semiconductor

@I(C) (A) (Test Condition)10m
@V(CBO) (V) (Test Condition)30
@V(CE) (V) (Test Condition)20
Emitter-Base Diode (Y/N)No
I(C) Abs.(A) Collector Current50m
I(CBO) Max. (A)50n
MilitaryN
Number of Devices4
P(D) Max.(W) Power Dissipation1.2
PackageQCC-N
Type (NPN/PNP)PNP
V(BR)CBO (V)40
V(BR)CEO (V)40
f(T) Min. (Hz) Transition Freq350M
h(FE) Min. Static Current Gain75

External links