EP2015L Independent Transistor Array - hFE Matching 10%
From Elantec Semiconductor
@I(C) (A) (Test Condition) | 10m |
@V(CBO) (V) (Test Condition) | 30 |
@V(CE) (V) (Test Condition) | 20 |
Emitter-Base Diode (Y/N) | No |
I(C) Abs.(A) Collector Current | 50m |
I(CBO) Max. (A) | 50n |
Military | N |
Number of Devices | 4 |
P(D) Max.(W) Power Dissipation | 1.2 |
Package | QCC-N |
Type (NPN/PNP) | PNP |
V(BR)CBO (V) | 40 |
V(BR)CEO (V) | 40 |
f(T) Min. (Hz) Transition Freq | 350M |
h(FE) Min. Static Current Gain | 75 |