M12L128324A-6TG
4M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86

From Elite Semiconductor Memory Technology, Inc.

StatusACTIVE
Access ModeFOUR BANK PAGE BURST
Access Time-Max (tRAC)5.5 ns
Memory Density1.34E8 deg
Memory IC TypeSYNCHRONOUS DRAM
Memory Width32
Mfr Package Description0.400 INCH, LEAD FREE, TSOP2-86
Number of Functions1
Number of Ports1
Number of Terminals86
Number of Words4.19E6 words
Number of Words Code4M
Operating ModeSYNCHRONOUS
Operating Temperature-Max70 Cel
Operating Temperature-Min0.0 Cel
Organization4M X 32
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE, THIN PROFILE
Supply Voltage-Max (Vsup)3.6 V
Supply Voltage-Min (Vsup)3 V
Supply Voltage-Nom (Vsup)3.3 V
Surface MountYes
Temperature GradeCOMMERCIAL
Terminal FormGULL WING
Terminal Pitch0.5000 mm
Terminal PositionDUAL

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