M52S16161A-10BG 1M X 16 SYNCHRONOUS DRAM, 9 ns, PBGA60
From Elite Semiconductor Memory Technology, Inc.
| Status | ACTIVE |
| Access Mode | DUAL BANK PAGE BURST |
| Access Time-Max (tRAC) | 9 ns |
| Memory Density | 1.68E7 deg |
| Memory IC Type | SYNCHRONOUS DRAM |
| Memory Width | 16 |
| Mfr Package Description | 6.4 X 10.10 MM, 0.65 MM PITCH, LEAD FREE, VFBGA-60 |
| Number of Functions | 1 |
| Number of Ports | 1 |
| Number of Terminals | 60 |
| Number of Words | 1.05E6 words |
| Number of Words Code | 1M |
| Operating Mode | SYNCHRONOUS |
| Operating Temperature-Max | 70 Cel |
| Operating Temperature-Min | 0.0 Cel |
| Organization | 1M X 16 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | GRID ARRAY, VERY THIN PROFILE, FINE PITCH |
| Supply Voltage-Max (Vsup) | 2.7 V |
| Supply Voltage-Min (Vsup) | 2.3 V |
| Supply Voltage-Nom (Vsup) | 2.5 V |
| Surface Mount | Yes |
| Technology | CMOS |
| Temperature Grade | COMMERCIAL |
| Terminal Form | BALL |
| Terminal Pitch | 0.6500 mm |
| Terminal Position | BOTTOM |
