VTB8440H
SILICON PHOTODIODES

From Excelitas Technologies Sensors

Active Area0.008 sq.in.
Angle, Response±50 °
Capacitance, Junction1 nF
Current, Dark2000 pA
Current, Short Circuit45 μA
Package TypeCase 21
Primary TypePhoto
Resistance, Shunt0.07 Gigaohms
Spectral Application Range320 to 1100 nm
Spectral Sensitivity0.1 A/W
Temperature, Operating-20 to +75 °C
Voltage, Breakdown40 V
Voltage, Open Circuit490 mV

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