• Category: Discrete Semiconductor Products; Current - Continuous Drain (Id) @ 25°C: 2A (Tc); Datasheets: FQP2N60C, FQPF2N60C TO220B03 Pkg Drawing; Drain to Source Voltage (Vdss): 600V; FET Feature: Standard; FET Type: MOSFET N-Channel, Metal Oxide; Family: FETs - Single; Gate Charge (Qg) @ Vgs: 12nC @ 10V; Input Capacitance (Ciss) @ Vds: 235pF @ 25V; Mounting Type: Through Hole; Online Catalog: N-Channel Standard FETs; Other Names: FQP2N60C-ND FQP2N60CFS; PCN Design/Specification: Passivation Material 14/May/2008; Package / Case: TO-220-3; Packaging: Tube; Power - Max: 54W; Product Photos: TO-220-3; Product Training Modules: High Voltage Switches for Power Processing; Rds On (Max) @ Id, Vgs: 4.7 Ohm @ 1A, 10V; Series: QFET®; Standard Package: 50; Supplier Device Package: TO-220; Vgs(th) (Max) @ Id: 4V @ 250µA
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