Irf.com/FSYC360D1
{"Terminal Finish":"TIN LEAD","Terminal Form":"NO LEAD","Package Shape":"RECTANGULAR","Status":"DISCONTINUED","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"21 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.2100 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"63 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"4...
1476 Bytes - 04:54:28, 03 July 2024