FCA20N60S_F109 MOSFET N-CH 650V TO-3PN
From Fairchild Semiconductor
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Datasheets | FCA20N60S |
| Drain to Source Voltage (Vdss) | 600V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 72nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 2250pF @ 25V |
| Mounting Type | Through Hole |
| PCN Assembly/Origin | Wafer Fabrication 04/Feb/2013 |
| PCN Design/Specification | Heat Sink Drawing Update 11/Feb/2014 |
| Package / Case | TO-3P-3, SC-65-3 |
| Packaging | Tube |
| Power - Max | 260W |
| Product Photos | TO-3P-3,TO-247-3 |
| Rds On (Max) @ Id, Vgs | 260 mOhm @ 10A, 10V |
| Series | SuperFET™ |
| Standard Package | 30 |
| Supplier Device Package | TO-3PN |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
