FDC2612 MOSFET N-CH 200V 1.1A SSOT-6
From Fairchild Semiconductor
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 1.1A (Ta) |
| Datasheets | FDC2612 |
| Drain to Source Voltage (Vdss) | 200V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 11nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 234pF @ 100V |
| Mounting Type | Surface Mount |
| Online Catalog | N-Channel Standard FETs |
| Other Names | FDC2612DKR |
| PCN Design/Specification | Mold Compound 08/April/2008 |
| PCN Packaging | Binary Year Code Marking 15/Jan/2014 |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Packaging | Digi-Reel® |
| Power - Max | 800mW |
| Product Photos | PowerTrench Series |
| Product Training Modules | High Voltage Switches for Power Processing |
| Rds On (Max) @ Id, Vgs | 725 mOhm @ 1.1A, 10V |
| Series | PowerTrench® |
| Standard Package | 1 |
| Supplier Device Package | 6-SSOT |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
