Advancedsemiconductor.com/HSCH5531
{"Status":"ACTIVE","Package Body Material":"UNSPECIFIED","Mfr Package Description":"711, 3 PIN","Frequency Band":"K BAND","Terminal Form":"FLAT","Package Style":"MICROWAVE","Diode Capacitance-Max":"0.1000 pF","Diode Element Material":"SILICON","Power Dissipation Limit-Max":"0.1500 W","Number of Elements":"1","Type of Schottky Barrier":"LOW BARRIER","Terminal Position":"TRIPLE","Diode Type":"MIXER DIODE","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Technology":"SCHOTTKY","Number of Terminals":"3",...
1244 Bytes - 21:25:49, 29 June 2024
Semiconductor.agilent.com/HSCH5531
{"Package":"Beam Lead","@V(R) (V)(Test Condition)":"1","I(RM) Max.(A) Reverse Current":"400n","Military":"N","@I(FM) (A) (Test Condition)":"1m","V(FM) Max.(V) Forward Voltage":"375m"}...
731 Bytes - 21:25:49, 29 June 2024