2SD738AB
Si NPN Power BJT

From Hitachi Semiconductor

StatusDiscontinued
@I(C) (A) (Test Condition)1.0
@V(CE) (V) (Test Condition)5.0
Absolute Max. Power Diss. (W)125
I(C) Abs.(A) Collector Current12
I(CBO) Max. (A)1.0m
MilitaryN
PackageSIP-Flange
V(BR)CEO (V)160
f(T) Min. (Hz) Transition Freq25M
h(FE) Max. Current gain.120
h(FE) Min. Static Current Gain60
t(f) Max. (s) Fall time.400n

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