2SK551 N-Channel Enhancement MOSFET
From Hitachi Semiconductor
@(VDS) (V) (Test Condition) | 15 |
@I(D) (A) (Test Condition) | 5.0 |
@V(DS) (V) (Test Condition) | 10 |
Absolute Max. Power Diss. (W) | 50 |
C(iss) Max. (F) | 730p |
I(D) Abs. Drain Current (A) | 10 |
I(DSS) Min. (A) | 250u |
I(GSS) Max. (A) | 10u |
Military | N |
Package | TO-220 |
V(BR)DSS (V) | 120 |
V(BR)GSS (V) | 15 |
g(fs) Max, (S) Trans. conduct, | 5.0 |
g(fs) Min. (S) Trans. conduct. | 3.0 |
r(DS)on Max. (Ohms) | 0.2 |
t(f) Max. (s) Fall time. | 45n |
t(r) Max. (s) Rise time | 40n |