{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-220AB","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"1100pF @ 25V","Series":"-","Standard Package":"1,000","Supplier Device Package":"TO-220AB","Datasheets":"IRF840LCPBF Packaging Information","Rds On (Max) @ Id, Vgs":"850 mOhm @ 4.8A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"125W","Package \/ Case":"TO-220-3","Mounting Type"...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"500 V","Transistor Applicatio...

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{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"500 V","Transistor Applicatio...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"8 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"S...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"500 V","Transistor Applicatio...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"8 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"S...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"500 V","Transistor Applicatio...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Case Connection":"DRAIN","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"SINGLE","Drain-source On Resistance-Ma...

{"Status":"ACTIVE","Lead Free":"Yes","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","Case Connection":"DRAIN","EU RoHS Compliant":"Yes","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configurat...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"8 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"S...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"500 V","Transistor Applicatio...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"8 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"S...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"500 V","Transistor Applicatio...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"8 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"S...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"500 V","Transistor Applicatio...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"8 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"S...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"500 V","Transistor Applicatio...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"8 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"S...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"500 V","Transistor Applicatio...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"8 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"S...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"500 V","Transistor Applicatio...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"8 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"S...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"500 V","Transistor Applicatio...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"8 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"S...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"500 V","Transistor Applicatio...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"8 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"S...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"500 V","Transistor Applicatio...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"8 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"S...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"500 V","Transistor Applicatio...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"8 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"S...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"500 V","Transistor Applicatio...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"PLASTIC\/EPOXY","Channel Type":"N-CHANNEL","Terminal Form":"THROUGH-HOLE","Operating Mode":"ENHANCEMENT","Package Style":"FLANGE MOUNT","Transistor Application":"SWITCHING","Drain Current-Max (ID)":"8 A","Case Connection":"DRAIN","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GENERAL PURPOSE POWER","Package Shape":"RECTANGULAR","Configuration":"S...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"500 V","Transistor Applicatio...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Package \/ Case":"TO-262-3 Long Leads, I\u00b2Pak, TO-262AA","Supplier Device Package":"I2PAK","Datasheets":"IRF840LCS(L)\/SiHF840LCS(L)","Rds On (Max) @ Id, Vgs":"850 mOhm @ 4.8A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"3.1W","Standard Package":"50","Input Capacitance (Ciss) @ Vds":"1100p...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Package \/ Case":"TO-262-3 Long Leads, I\u00b2Pak, TO-262AA","Supplier Device Package":"I2PAK","Catalog Drawings":"IRF TO-262 Series Side 1 IRF TO-262 Series Side 2","Datasheets":"IRF840LCS(L)\/SiHF840LCS(L)","Rds On (Max) @ Id, Vgs":"850 mOhm @ 4.8A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max"...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Catalog Drawings":"IR(F,L)x Series Side 1 IR(F,L)x Series Side 2","Package \/ Case":"TO-220-3","Current - Continuous Drain (Id) @ 25\u00b0C":"8A (Tc)","Gate Charge (Qg) @ Vgs":"39nC @ 10V","Product Photos":"TO-220AB","PCN Assembly\/Origin":"SIL-099-2014-Rev-0 12\/Nov\/2014","Rds On (Max) @ Id, Vgs":"850 mOhm @ 4.8A, 10V","Datasheets":"IRF840LCPBF Packaging Information","FET Type":"MOSFET N-Channel,...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Input Capacitance (Ciss) @ Vds":"1100pF @ 25V","Series":"-","Standard Package":"50","Supplier Device Package":"D2PAK","Datasheets":"IRF840LCS(L)\/SiHF840LCS(L)","Rds On (Max) @ Id, Vgs":"850 mOhm @ 4.8A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"3.1W","Package \/ Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), T...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Standard Package":"1,000","Supplier Device Package":"D2PAK","Datasheets":"IRF840LCS(L)\/SiHF840LCS(L)","Rds On (Max) @ Id, Vgs":"850 mOhm @ 4.8A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"3.1W","Package \/ Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Mounting Type":"Surface Mount","Dra...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Standard Package":"800","Supplier Device Package":"D2PAK","Datasheets":"IRF840LCS(L)\/SiHF840LCS(L)","Rds On (Max) @ Id, Vgs":"850 mOhm @ 4.8A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"3.1W","Package \/ Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Mounting Type":"Surface M...

{"Terminal Finish":"MATTE TIN","Terminal Form":"GULL WING","Power Dissipation Ambient-Max":"3.1 W","Avalanche Energy Rating (Eas)":"510 mJ","Package Shape":"SQUARE","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"8 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.8500 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"28 A",...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Standard Package":"800","Supplier Device Package":"D2PAK","Datasheets":"IRF840LCS(L)\/SiHF840LCS(L)","Rds On (Max) @ Id, Vgs":"850 mOhm @ 4.8A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"3.1W","Package \/ Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Mounting Type":"Surface M...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-263","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Standard Package":"800","Supplier Device Package":"TO-263AB","Datasheets":"IRF840LCS(L)\/SiHF840LCS(L)","Rds On (Max) @ Id, Vgs":"850 mOhm @ 4.8A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"3.1W","Package \/ Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Mounting Type":"Surfac...

{"Category":"Power MOSFET","Dimensions":"10.51 x 4.65 x 15.49 mm","Maximum Continuous Drain Current":"8 A","Width":"4.65 mm","Maximum Drain Source Voltage":"500 V","Package Type":"TO-220AB","Number of Elements per Chip":"1","Configuration":"Single","Maximum Operating Temperature":"+150 \u00b0C","Typical Gate Charge @ Vgs":"Maximum of 39 nC @ 10 V","Operating Temperature Range":"-55 to +150 \u00b0C","Typical Turn On Delay Time":"12 ns","Channel Type":"N","Typical Input Capacitance @ Vds":"1100 pF @ 25 V","Le...