Infineon.com/IRFB4110GPBF
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"180(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"100(V)","Packaging":"Rail\/Tube","Power Dissipation":"370(W)","Operating Temp Range":"-55C to 175C","Package Type":"TO-220AB","Type":"Power MOSFET","Pin Count":"3 +Tab","Number of Elements":"1"}...
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Irf.com/IRFB4110GPBF
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Package \/ Case":"TO-220-3","Current - Continuous Drain (Id) @ 25\u00b0C":"120A (Tc)","Gate Charge (Qg) @ Vgs":"210nC @ 10V","Product Photos":"TO-220AB PKG","PCN Assembly\/Origin":"Mosfet Backend Wafer Processing 23\/Oct\/2013 Additional Assembly Site 13\/Jun\/2014","Product Training Modules":"High Voltage Integrated Circuits (HVIC Gate Drivers)","Rds On (Max) @ Id, Vgs":"4.5 mOhm @ 75A, 10V","Data...
2006 Bytes - 19:27:49, 07 July 2022