{"Factory Pack Quantity":"30","Vds - Drain-Source Breakdown Voltage":"1000 V","Transistor Polarity":"N-Channel","Package \/ Case":"TO-268-2","Fall Time":"30 ns","Packaging":"Tube","Product Category":"MOSFET","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"IXYS","Unit Weight":"0.158733 oz","Tradename":"HiPerFET","Configuration":"Single","Maximum Operating Temperature":"+ 150 C","Manufacturer":"IXYS","Id - Continuous Drain Current":"15 A","Rds On - Drain-Source Resistance":"700 mOhms","RoHS":"Details","...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Mounting Type":"Surface Mount","Family":"FETs - Single","Vgs(th) (Max) @ Id":"5V @ 4mA","Series":"HiPerFET\u2122","Package \/ Case":"TO-268-3, D\u00b3Pak (2 Leads + Tab), TO-268AA","Supplier Device Package":"TO-268","Datasheets":"IXF(H,K,T)15N100Q","Rds On (Max) @ Id, Vgs":"700 mOhm @ 500mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"360W","Standard Package":"30","Drain to Source Voltage (Vdss)":"1...

{"Category":"Discrete Semiconductor Products","Packaging":"Tube","FET Feature":"Standard","Product Photos":"TO-268","Family":"FETs - Single","Vgs(th) (Max) @ Id":"6.5V @ 4mA","Series":"HiPerFET\u2122","Package \/ Case":"TO-268-3, D\u00b3Pak (2 Leads + Tab), TO-268AA","Supplier Device Package":"TO-268","Rds On (Max) @ Id, Vgs":"1.05 Ohm @ 7.5A, 10V","Datasheets":"IXFx15N100Q3","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"30","Power - Max":"690W","Featured Product":"Q3-Class HiPerFET\u2122 P...

{"Terminal Finish":"PURE TIN","Terminal Form":"GULL WING","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"15 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.7000 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"60 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS ...

{"Terminal Finish":"PURE TIN","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"1500 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"15 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.7250 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"60 A","Channel Type":"N-CHANNEL","FET Te...

{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"1000 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC\/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"15 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"1.05 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"45 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"1000 V","...