Datasheet.Directory

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Product Photos":"TO-247","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4.5V @ 25\u00b5A","Series":"-","Standard Package":"30","Supplier Device Package":"TO-247 (IXTH)","Datasheets":"IXT(H,T)1N100","Rds On (Max) @ Id, Vgs":"11 Ohm @ 1A, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"60W","Package / Case":"TO-247-3","Mounting Type":"Through Hole","Drain to Source Voltage (Vdss)":"1000V (1kV)","Current -...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Online Catalog":"N-Channel Standard FETs","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Package / Case":"TO-247-3","Supplier Device Package":"TO-247 (IXTH)","Datasheets":"IXTx1N200P3(HV)","Rds On (Max) @ Id, Vgs":"40 Ohm @ 500mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"125W","Standard Package":"30","Drain to Source Voltage (Vdss)":"2...

{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Online Catalog":"N-Channel Standard FETs","Product Photos":"IXHX40N150V1HV","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"-","Standard Package":"30","Supplier Device Package":"TO-247HV","Datasheets":"IXTx1N200P3(HV)","Rds On (Max) @ Id, Vgs":"40 Ohm @ 500mA, 10V","FET Type":"MOSFET N-Channel, Metal Oxide","Packaging":"Tube","Power - Max":"125W","Package / Case":"TO-247-3","Mounting Type":"Through Hole","Drain...

{"Factory Pack Quantity":"30","Vds - Drain-Source Breakdown Voltage":"2500 V","Transistor Polarity":"N-Channel","Package / Case":"TO-247-3","Fall Time":"39 ns","Packaging":"Tube","Product Category":"MOSFET","Vgs - Gate-Source Breakdown Voltage":"20 V","Brand":"IXYS","Unit Weight":"0.229281 oz","Configuration":"Single","Maximum Operating Temperature":"+ 150 C","Manufacturer":"IXYS","Forward Transconductance - Min":"1.8 mS","Id - Continuous Drain Current":"1.5 A","Rds On - Drain-Source Resistance":"40 Ohms","...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Avalanche Energy Rating (Eas)":"200 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"11 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"6 A","Channel Type":"N-CHANNEL","FET ...

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"THROUGH-HOLE","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"1.5 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"40 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"6 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","...