CFY67-08ES K BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
From Infineon Technologies AG
| Status | ACTIVE |
| Case Connection | SOURCE |
| Channel Type | N-CHANNEL |
| Configuration | SINGLE |
| DS Breakdown Voltage-Min | 3.5 V |
| Drain Current-Max (ID) | 0.0600 A |
| FET Technology | HIGH ELECTRON MOBILITY |
| Highest Frequency Band | K BAND |
| Mfr Package Description | HERMETIC SEALED, MICROX-4 |
| Number of Elements | 1 |
| Number of Terminals | 4 |
| Operating Mode | DEPLETION |
| Package Body Material | UNSPECIFIED |
| Package Shape | ROUND |
| Package Style | DISK BUTTON |
| Power Gain-Min (Gp) | 11 dB |
| Surface Mount | Yes |
| Terminal Finish | MATTE TIN |
| Terminal Form | FLAT |
| Terminal Position | RADIAL |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | GALLIUM ARSENIDE |
| Transistor Type | RF SMALL SIGNAL |
