IPD082N10N3GATMA1 MOSFET N-CH 100V 80A TO252-3
From Infineon Technologies
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Datasheets | IPx08xN10N3 G |
| Drain to Source Voltage (Vdss) | 100V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 55nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 3980pF @ 50V |
| Mounting Type | Surface Mount |
| Other Names | SP001127824 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Packaging | Tape & Reel (TR) |
| Power - Max | 125W |
| Product Photos | TO252-3 |
| Rds On (Max) @ Id, Vgs | 8.2 mOhm @ 73A, 10V |
| Series | OptiMOS™ |
| Standard Package | 2,500 |
| Supplier Device Package | PG-TO252-3 |
| Vgs(th) (Max) @ Id | 3.5V @ 75µA |
