SIDC24D30SIC3 DIODE SILICON 300V 10A WAFER
From Infineon Technologies
| Capacitance @ Vr, F | 600pF @ 1V, 1MHz |
| Category | Discrete Semiconductor Products |
| Current - Average Rectified (Io) | 10A (DC) |
| Current - Reverse Leakage @ Vr | 200µA @ 300V |
| Datasheets | SIDC24D30SIC3 |
| Diode Type | Silicon Carbide Schottky |
| Family | Diodes, Rectifiers - Single |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Other Names | SP000013873 |
| Package / Case | Wafer |
| Packaging | Bulk |
| Reverse Recovery Time (trr) | 0ns |
| Series | - |
| Speed | No Recovery Time > 500mA (Io) |
| Standard Package | 1 |
| Supplier Device Package | Sawn on foil |
| Voltage - DC Reverse (Vr) (Max) | 300V |
| Voltage - Forward (Vf) (Max) @ If | 1.7V @ 10A |
