2N6802PBF
2.5 A, 500 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF

From International Rectifier

StatusACTIVE
Avalanche Energy Rating (Eas)0.3500 mJ
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min500 V
Drain Current-Max (ID)2.5 A
Drain-source On Resistance-Max1.6 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Mfr Package DescriptionHERMETIC SEALED, TO-205AF, 3 PIN
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialMETAL
Package ShapeROUND
Package StyleCYLINDRICAL
Pulsed Drain Current-Max (IDM)11 A
Terminal FinishNOT SPECIFIED
Terminal FormWIRE
Terminal PositionBOTTOM
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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