IRF7404TR
5.4 A, 20 V, 0.04 ohm, P-CHANNEL, Si, POWER, MOSFET, MS-012AA

From International Rectifier

StatusDISCONTINUED
Channel TypeP-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min20 V
Drain Current-Max (ID)5.4 A
Drain-source On Resistance-Max0.0400 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionLEAD FREE, SO-8
Number of Elements1
Number of Terminals8
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Power Dissipation Ambient-Max2.5 W
Pulsed Drain Current-Max (IDM)27 A
Surface MountYes
Terminal FinishTIN LEAD
Terminal FormGULL WING
Terminal PositionDUAL
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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