IRFB4110GPBF MOSFET N-CH 100V 120A TO220AB
From International Rectifier
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Datasheets | IRFB4110GPbF |
| Drain to Source Voltage (Vdss) | 100V |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 210nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 9620pF @ 50V |
| Mounting Type | Through Hole |
| Online Catalog | N-Channel Logic Level Gate FETs |
| PCN Assembly/Origin | Mosfet Backend Wafer Processing 23/Oct/2013 Additional Assembly Site 13/Jun/2014 |
| PCN Packaging | Package Drawing Update 19/Aug/2015 |
| Package / Case | TO-220-3 |
| Packaging | Tube |
| Power - Max | 370W |
| Product Photos | TO-220AB PKG |
| Product Training Modules | High Voltage Integrated Circuits (HVIC Gate Drivers) |
| Rds On (Max) @ Id, Vgs | 4.5 mOhm @ 75A, 10V |
| Series | HEXFET® |
| Standard Package | 50 |
| Supplier Device Package | TO-220AB |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
