IRFR9120NTRRPBF
MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 0.48Ohm; ID -6.6A; D-Pak (TO-252AA); PD 40W

From International Rectifier

Current, Drain-6.6 A
Gate Charge, Total27 nC
Package TypeD-Pak (TO-252AA)
PolarizationP-Channel
Power Dissipation40 W
Resistance, Drain to Source On0.48 Ohm
Temperature, Operating, Maximum+150 °C
Temperature, Operating, Minimum-55 °C
Time, Turn-Off Delay28 ns
Time, Turn-On Delay14 ns
Transconductance, Forward1.4 S
Voltage, Breakdown, Drain to Source-100 V
Voltage, Forward, Diode-1.6 V
Voltage, Gate to Source±20 V

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