JANSR2N7422U
22 A, 100 V, 0.085 ohm, P-CHANNEL, Si, POWER, MOSFET

From International Rectifier

StatusACTIVE
Avalanche Energy Rating (Eas)500 mJ
Case ConnectionDRAIN
Channel TypeP-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min100 V
Drain Current-Max (ID)22 A
Drain-source On Resistance-Max0.0850 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionHERMETIC SEALED, CERAMIC, SMD-1, 3 PIN
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialCERAMIC, METAL-SEALED COFIRED
Package ShapeRECTANGULAR
Package StyleCHIP CARRIER
Pulsed Drain Current-Max (IDM)88 A
Surface MountYes
Terminal FinishTIN LEAD
Terminal FormNO LEAD
Terminal PositionBOTTOM
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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