JANSR2N7423 14 A, 200 V, 0.33 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
From International Rectifier
Status | ACTIVE |
Avalanche Energy Rating (Eas) | 500 mJ |
Channel Type | P-CHANNEL |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 200 V |
Drain Current-Max (ID) | 14 A |
Drain-source On Resistance-Max | 0.3300 ohm |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Mfr Package Description | HERMETIC SEALED, CERAMIC PACKAGE-3 |
Number of Elements | 1 |
Number of Terminals | 3 |
Operating Mode | ENHANCEMENT |
Package Body Material | CERAMIC, METAL-SEALED COFIRED |
Package Shape | SQUARE |
Package Style | FLANGE MOUNT |
Pulsed Drain Current-Max (IDM) | 56 A |
Terminal Finish | TIN LEAD |
Terminal Form | PIN/PEG |
Terminal Position | SINGLE |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Transistor Type | GENERAL PURPOSE POWER |