JANSR2N7434
31 A, 250 V, 0.123 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA

From International Rectifier

StatusACTIVE
Avalanche Energy Rating (Eas)500 mJ
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min250 V
Drain Current-Max (ID)31 A
Drain-source On Resistance-Max0.1230 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialMETAL
Package ShapeSQUARE
Package StyleFLANGE MOUNT
Pulsed Drain Current-Max (IDM)124 A
Terminal FinishTIN LEAD
Terminal FormPIN/PEG
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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