IXGH32N60BU1S N-Channel IGBT
From IXYS Corporation
| @I(C) (A) (Test Condition) | 32 |
| @V(CE) (V) (Test Condition) | 10 |
| @V(GE) (Test Condition) | 15 |
| Absolute Max. Power Diss. (W) | 200 |
| I(C) Abs.(A) Collector Current | 60 |
| I(CES) Max. (A) | 200u |
| I(GES) Max. (A) | 100n |
| Package | TO-247SMD |
| V(BR)CES (V) | 600 |
| V(BR)GES (V) | 20 |
| V(CE)sat Max.(V) | 2.5 |
| V(GE)th Max. (V) | 5.5 |
| g(fe) Max. (S) Trans. admitt. | 20 |
| g(fe) Min. (S) Trans. admitt. | 15 |
| t(d)off Max. (s) Off time | 175n |
| t(f) Max. (s) Fall time. | 150n |
| t(r) Max. (s) Rise time | 30n |
| td(on) Max (s) On time delay | 25n |
