IXTM4N90A
N-Channel Enhancement MOSFET

From IXYS Corporation

@(VDS) (V) (Test Condition)20
@I(D) (A) (Test Condition)2.0
Absolute Max. Power Diss. (W)125
C(iss) Max. (F)1.8n
I(D) Abs. Drain Current (A)4.0
I(DSS) Min. (A)200u
I(GSS) Max. (A)100n
MilitaryN
PackageTO-204AC
V(BR)DSS (V)900
V(BR)GSS (V)20
g(fs) Min. (S) Trans. conduct.2.5
r(DS)on Max. (Ohms)2.5
t(f) Max. (s) Fall time.130n
t(r) Max. (s) Rise time150n

External links