{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"30mA","Noise Figure (dB Typ @ f)":"3.5dB @ 450MHz","Transistor Type":"PNP","Frequency - Transition":"-","Family":"RF Transistors (BJT)","Series":"-","Standard Package":"100","Voltage - Collector Emitter Breakdown (Max)":"30V","Supplier Device Package":"*","Packaging":"*","Datasheets":"2N4957UB","Power - Max":"200mW","Gain":"25dB","Package \/ Case":"*","Mounting Type":"*","DC Current Gain (hFE) (Min) @ Ic, Vce":"30 @ 5mA, 10V","O...

{"Status":"ACTIVE","Collector-base Capacitance-Max":"0.8000 pF","Package Body Material":"CERAMIC, METAL-SEALED COFIRED","Mfr Package Description":"CERSOT-3","Terminal Form":"NO LEAD","Power Dissipation Ambient-Max":"0.2000 W","Package Style":"SMALL OUTLINE","Collector Current-Max (IC)":"0.0300 A","Collector-emitter Voltage-Max":"30 V","Transistor Application":"AMPLIFIER","Highest Frequency Band":"ULTRA HIGH FREQUENCY BAND","Number of Elements":"1","Transistor Element Material":"SILICON","Terminal Position":...