Irf.com/JANTXV2N6764
{"Terminal Finish":"TIN LEAD","Terminal Form":"PIN\/PEG","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"ROUND","Status":"ACTIVE","Package Body Material":"METAL","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"38 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.0650 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"152 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-...
1513 Bytes - 09:47:43, 03 July 2024
Microsemi.com/JANTXV2N6764
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"65 mOhm @ 38A, 10V","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500\/543","Package \/ Case":"TO-204AE","Supplier Device Package":"TO-3","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6764,66,68,70","Power - Max":"4W","Standard Package":"1","Drain to Source Voltage (Vdss)":"100V","Current - Continuous D...
1563 Bytes - 09:47:43, 03 July 2024
Microsemi.com/JANTXV2N6764T1
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"65 mOhm @ 38A, 10V","FET Feature":"Standard","Mounting Type":"Through Hole","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 250\u00b5A","Series":"Military, MIL-PRF-19500\/543","Package \/ Case":"TO-254-3, TO-254AA (Straight Leads)","Supplier Device Package":"TO-254AA","Packaging":"Bulk","FET Type":"MOSFET N-Channel, Metal Oxide","Datasheets":"2N6764,66,68,70T1","Power - Max":"4W","Standard Package":"1","Drain to Source Voltage (Vdss...
1614 Bytes - 09:47:43, 03 July 2024