{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"GLASS","Mfr Package Description":"GLASS PACKAGE-2","Terminal Form":"WIRE","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"11.11 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"150 pF","Power Dissipation Limit-Max":"0.4750 W","Case Connection":"ISOLATED","Quality Factor-Min":"250","Terminal Position":"AXIAL","Diode Type":"VARIABLE CAPACITANCE DIODE","Package Sha...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"20 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.6","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"10 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"150 pF","Power Dissipation Limit-Max":"0.5000 W","Case Connection":"ISOLATED","Quality Factor-Min":...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"20 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.6","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"5 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"150 pF","Power Dissipation Limit-Max":"0.5000 W","Case Connection":"ISOLATED","Quality Factor-Min":"...

{"Status":"ACTIVE","Terminal Finish":"NOT SPECIFIED","Package Body Material":"GLASS","Frequency Band":"VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY","Breakdown Voltage-Min":"20 V","Terminal Form":"WIRE","Diode Capacitance Ratio-Min":"2.6","Variable Capacitance Diode Classification":"ABRUPT","Package Style":"LONG FORM","Diode Cap Tolerance":"2 %","Diode Element Material":"SILICON","Diode Capacitance-Nom (Cd)":"150 pF","Power Dissipation Limit-Max":"0.5000 W","Case Connection":"ISOLATED","Quality Factor-Min":"...

{"C1\/C2 Min. Capacitance Ratio":"2.6","V(RRM)(V) Rep.Pk.Rev. Voltage":"20","Semiconductor Material":"Silicon","Q Factor Min.":"250","Package":"DO-14","P(D) Max.(W) Power Dissipation":"500m","@Freq. (Hz) (Test Condition)":"20M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"150p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...

{"C1\/C2 Min. Capacitance Ratio":"2.6","V(RRM)(V) Rep.Pk.Rev. Voltage":"20","Semiconductor Material":"Silicon","Q Factor Min.":"250","Package":"Chip","@Freq. (Hz) (Test Condition)":"20M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"150p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...

{"C1\/C2 Min. Capacitance Ratio":"2.6","V(RRM)(V) Rep.Pk.Rev. Voltage":"20","Semiconductor Material":"Silicon","Q Factor Min.":"250","Package":"DO-14","P(D) Max.(W) Power Dissipation":"500m","@Freq. (Hz) (Test Condition)":"20M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"150p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...

{"C1\/C2 Min. Capacitance Ratio":"2.6","V(RRM)(V) Rep.Pk.Rev. Voltage":"20","Semiconductor Material":"Silicon","Q Factor Min.":"250","Package":"Chip","@Freq. (Hz) (Test Condition)":"20M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"150p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...

{"C1\/C2 Min. Capacitance Ratio":"2.6","V(RRM)(V) Rep.Pk.Rev. Voltage":"20","Semiconductor Material":"Silicon","Q Factor Min.":"250","Package":"Chip","@Freq. (Hz) (Test Condition)":"20M","@V(C1) Min.(V)(Test Condition)":"2","Ct{Cj} Nom. (F) Junction Cap.":"150p","Military":"N","@V(T){V(J)}(V)(Test Condition)":"4.0","@V(Q min)(V) (Test Condition)":"4"}...