VP2110K1-G MOSFET P-CH 100V 0.12A SOT23-3
From Microchip Technology
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 120mA (Tj) |
| Datasheets | VP2110 |
| Drain to Source Voltage (Vdss) | 100V |
| FET Feature | Standard |
| FET Type | MOSFET P-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | - |
| Input Capacitance (Ciss) @ Vds | 60pF @ 25V |
| Mounting Type | Surface Mount |
| Online Catalog | P-Channel Logic Level Gate FETs |
| Other Names | VP2110K1-G-ND VP2110K1-GTR |
| PCN Assembly/Origin | Qualification Supertex Devices 22/Jul/2014 Additional Fabrication Site 03/Sep/2014 Qualification Report Revision 29/Jan/2015 Fab Site Addition 14/Aug/2014 |
| PCN Design/Specification | Die Attach Material Update 22/Jun/2015 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Packaging | Tape & Reel (TR) |
| Power - Max | 360mW |
| Product Photos | TO-236AB (SOT23) |
| Rds On (Max) @ Id, Vgs | 12 Ohm @ 500mA, 10V |
| Series | - |
| Standard Package | 3,000 |
| Supplier Device Package | TO-236AB (SOT23) |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
