2N6083
VHF BAND, Si, NPN, RF POWER TRANSISTOR

From Microsemi Corp.

StatusACTIVE
Collector Current-Max (IC)4 A
Collector-base Capacitance-Max130 pF
Collector-emitter Voltage-Max18 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Highest Frequency BandVERY HIGH FREQUENCY BAND
Mfr Package Description0.380 INCH, PLASTIC, M135, 4 PIN
Number of Elements1
Number of Terminals4
Package Body MaterialUNSPECIFIED
Package ShapeROUND
Package StylePOST/STUD MOUNT
Terminal FinishTIN LEAD
Terminal FormFLAT
Terminal PositionRADIAL
Transistor ApplicationAMPLIFIER
Transistor Element MaterialSILICON
Transistor PolarityNPN
Transistor TypeRF POWER
Transition Frequency-Nom (fT)200 MHz

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