APT8075BVFR
12 A, 800 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD

From Microsemi Corp.

StatusACTIVE
Avalanche Energy Rating (Eas)960 mJ
Case ConnectionDRAIN
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min800 V
Drain Current-Max (ID)12 A
Drain-source On Resistance-Max0.7500 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionTO-247, 3 PIN
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleFLANGE MOUNT
Pulsed Drain Current-Max (IDM)48 A
Terminal FinishTIN LEAD
Terminal FormTHROUGH-HOLE
Terminal PositionSINGLE
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

External links