KV2123 C BAND, 3 pF, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
From Microsemi Corp.
| Status | ACTIVE |
| Configuration | SINGLE |
| Diode Cap Tolerance | 11.86 % |
| Diode Capacitance-Nom (Cd) | 3 pF |
| Diode Element Material | SILICON |
| Diode Type | VARIABLE CAPACITANCE DIODE |
| Frequency Band | C BAND |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Quality Factor-Min | 1000 |
| Surface Mount | Yes |
| Terminal Finish | TIN LEAD |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Variable Capacitance Diode Classification | HYPERABRUPT |
