NES150/61
30 A, 100 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-61

From Microsemi Corp.

StatusACTIVE
Channel TypeN-CHANNEL
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min100 V
Drain Current-Max (ID)30 A
Drain-source On Resistance-Max0.5500 ohm
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Mfr Package DescriptionTO-61, 3 PIN
Number of Elements1
Number of Terminals3
Operating ModeENHANCEMENT
Package Body MaterialMETAL
Package ShapeROUND
Package StylePOST/STUD MOUNT
Terminal FinishTIN LEAD
Terminal FormSOLDER LUG
Terminal PositionUPPER
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

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